2N7002K-T1-GE3 - Vishay, SOT-23

In stock - 221954 items available
SKU: 2N7002K-T1-GE3-SOT-23
Regular price €0,95
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2N7002K-T1-GE3

2N7002K-T1-GE3 de Vishay: transistor de canal N de 60 V y 300 mA (Ta), 350 mW (Ta), montaje superficial SOT-23-3 (TO-236). Suministrado en encapsulado SOT-23.

Disponible en stock: 221954SOT-23Activo
FabricanteVishay
EncapsuladoSOT-23
Stock221954
Paquete estándar3000

Precios & Pedidos

Precio unitario$0.0264
Cantidad Precio unitario (USD)
1 $0.0264
3000 $0.0233

Información básica

Fabricante Vishay
Número de pieza del fabricante 2N7002K-T1-GE3
Categoría MOSFET
Encapsulado SOT-23
MOQ 1
Paquete estándar 3000
Estado del ciclo de vida Active

Atributos técnicos

Tipo de FET N-Channel
Tecnología MOSFET (Metal Oxide)
Voltaje de drenaje a fuente (Vdss) 60 V
Corriente: drenaje continuo (Id) @ 25°C 300mA (Ta)
Tensión de excitación (Rds On máx., Rds On mín.) 4.5V, 10V
Rds On (máx.) @ Id, Vgs 2Ohm @ 500mA, 10V
Vgs(th) (máx.) @ Id 2.5V @ 250µA
Carga de puerta (Qg) (máx.) @ Vgs 0.6 nC @ 4.5 V
Vgs (máx.) ±20V
Capacitancia de entrada (Ciss) (máx.) @ Vds 30 pF @ 25 V
Disipación de potencia (máx.) 350mW (Ta)
Temperatura de funcionamiento -55°C ~ 150°C (TJ)
Tipo de montaje Surface Mount
Encapsulado del dispositivo del proveedor SOT-23-3 (TO-236)
Encapsulado / Carcasa TO-236-3, SC-59, SOT-23-3

Documentos

El inventario y los precios se actualizan periódicamente. Los datos técnicos se proporcionan como referencia para ingeniería. La hoja de datos proviene del fabricante original.

Datasheet

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