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Vishay

SI4101DY-T1-GE3 - Vishay, SO-8

In stock - 21210 items available
SKU: SI4101DY-T1-GE3-SO-8
(0)
€0,95
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  • Prices include applicable taxes; import duties and customs clearance are not included.
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  • Genuine & original parts, 12-month warranty, DOA replacement.
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Quality Certifications
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SI4101DY-T1-GE3

SI4101DY-T1-GE3 de Vishay: Canal P de 30 V y 25.7A (Tc), 6W (Tc), montaje superficial 8-SOIC. Suministrado en encapsulado SO-8.

Stock disponible: 21210SO-8Activo
FabricanteVishay
EncapsuladoSO-8
Stock21210
Paquete estándar2500

Precios & Pedidos

Precio unitario$0.5142
Cantidad Precio unitario (USD)
1 $0.5142
2500 $0.4909

Información básica

Fabricante Vishay
Número de pieza del fabricante SI4101DY-T1-GE3
Categoría MOSFET
Encapsulado SO-8
MOQ 1
Paquete estándar 2500
Estado del ciclo de vida Active

Atributos técnicos

Tipo de FET P-Channel
Tecnología MOSFET (Metal Oxide)
Voltaje de drenaje a fuente (Vdss) 30 V
Corriente: drenaje continuo (Id) @ 25°C 25.7A (Tc)
Tensión de excitación (Rds On máx., Rds On mín.) 4.5V, 10V
Rds On (máx.) @ Id, Vgs 6mOhm @ 15A, 10V
Vgs(th) (máx.) @ Id 2.5V @ 250µA
Carga de puerta (Qg) (máx.) @ Vgs 203 nC @ 10 V
Vgs (máx.) ±20V
Capacitancia de entrada (Ciss) (máx.) @ Vds 8190 pF @ 15 V
Disipación de potencia (máx.) 6W (Tc)
Temperatura de funcionamiento -55°C ~ 150°C (TJ)
Tipo de montaje Surface Mount
Encapsulado del dispositivo del proveedor 8-SOIC
Encapsulado / Carcasa 8-SOIC (0.154", 3.90mm Width)

Documentos

SI4101DY-T1-GE3 Hoja de datos (PDF)

El inventario y los precios se actualizan periódicamente. Los datos técnicos se proporcionan como referencia para ingeniería. La hoja de datos proviene del fabricante original.

Datasheet

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