Si2308BDS-T1-GE3 SOT-23-3 (TO-236) package
Si2308BDS-T1-GE3 SOT-23-3 (TO-236) package
VISHAY

Si2308BDS-T1-GE3 - Vishay MOSFET N-Channel 60V

In stock
SKU: SI2308BDS-T1-GE3-SOT-23-3
(0)
€0,95
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Datasheet

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Si2308BDS-T1-GE3

MOSFET di potenza TrenchFET a canale N da 60 V per commutazione della batteria e conversione DC-DC in un package SOT-23.

Scorte disponibili: 1590SOT-23-3 (TO-236)Obsoleto
ProduttoreVishay Siliconix
CustodiaSOT-23-3 (TO-236)
Scorte1590
Prima quantità quotata10 pcs

Prezzi & ordinazione

Prezzo unitario (USD)$0.43
Quantità Prezzo unitario quotato (USD)
10+ $0.4275
100+ $0.3947
500+ $0.3782
1000+ $0.3683
2000+ $0.3618

Informazioni sul prodotto

Numero di parte del produttore Si2308BDS-T1-GE3
Custodia SOT-23-3 (TO-236)
Stato del ciclo di vita Obsoleto
Produttore Vishay Siliconix
Tipo FET Canale N
Tensione Drain-Source (max) 60 V
Tensione Gate-Source (max) +/-20 V
Resistenza in stato ON (max) 156 mOhm a VGS=10 V, ID=1.9 A
Temperatura di giunzione operativa -55 a +150 °C
Tipo di montaggio Montaggio superficiale
Incremento ordine 1 pcs
Pacco minimo fornitore 1 pcs
Codice data 22+
Tempi di consegna del fornitore 7-9 giorni lavorativi
Preventivo fornitore aggiornato 2026-10-17

Scheda tecnica

Scheda tecnica Si2308BDS-T1-GE3 (PDF)

Datasheet PDF

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