Si2308BDS-T1-GE3 - Vishay 60V N-Channel MOSFET

In stock
SKU: SI2308BDS-T1-GE3-SOT-23-3
Regular price руб100,00
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Si2308BDS-T1-GE3

60V N-channel TrenchFET power MOSFET for battery switching and DC-DC conversion in a SOT-23 package.

Available Stock: 1590SOT-23-3 (TO-236)Obsolete
ManufacturerVishay Siliconix
PackageSOT-23-3 (TO-236)
Stock1590
First Quoted Quantity10 pcs

Pricing & Ordering

Unit Price (USD)$0.43
Quantity Quoted Unit Price (USD)
10+ $0.4275
100+ $0.3947
500+ $0.3782
1000+ $0.3683
2000+ $0.3618

Product Information

Manufacturer Part Number Si2308BDS-T1-GE3
Package SOT-23-3 (TO-236)
Lifecycle Status Obsolete
Manufacturer Vishay Siliconix
FET Type N-Channel
Drain-Source Voltage (max) 60 V
Gate-Source Voltage (max) +/-20 V
On-State Resistance (max) 156 mOhm at VGS=10 V, ID=1.9 A
Operating Junction Temperature -55 to +150 deg C
Mounting Type Surface Mount
Order Increment 1 pcs
Supplier Minimum Pack 1 pcs
Date Code 22+
Supplier Lead Time 7-9 business days
Supplier Quote Updated 2026-10-17

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