Si2308BDS-T1-GE3 SOT-23-3 (TO-236) package
Si2308BDS-T1-GE3 SOT-23-3 (TO-236) package
VISHAY

Si2308BDS-T1-GE3 - Vishay 60V N-kanal MOSFET

In stock
SKU: SI2308BDS-T1-GE3-SOT-23-3
(0)
3,00 kr
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Datasheet

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Si2308BDS-T1-GE3

60V N-kanal TrenchFET-effektMOSFET til batteriskift og DC-DC-konvertering i SOT-23-kapsel.

Tilgængelig lagerbeholdning: 1590SOT-23-3 (TO-236)Udgået
ProducentVishay Siliconix
KapselSOT-23-3 (TO-236)
Lager1590
Første tilbudte mængde10 pcs

Priser & bestilling

Stykpris (USD)$0.43
Antal Angivet enhedspris (USD)
10+ $0.4275
100+ $0.3947
500+ $0.3782
1000+ $0.3683
2000+ $0.3618

Produktinformation

Producentens varenummer Si2308BDS-T1-GE3
Kapsel SOT-23-3 (TO-236)
Livscyklusstatus Udgået
Producent Vishay Siliconix
FET-type N-kanal
Drain-source-spænding (maks.) 60 V
Gate-source-spænding (maks.) +/-20 V
On-state-modstand (maks.) 156 mOhm ved VGS=10 V, ID=1.9 A
Junctiontemperatur ved drift -55 til +150 °C
Monteringstype Overflademonteret
Ordreforøgelse 1 stk.
Leverandørens minimumspakke 1 stk.
Datokode 22+
Leverandørens leveringstid 7-9 hverdage
Leverandørtilbud opdateret 2026-10-17

Datablad

Si2308BDS-T1-GE3-datablad (PDF)

Datasheet PDF

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