SI2302DDS-T1-GE3 - Vishay, SOT-23

En stock - 20091 artículos disponibles
SKU: SI2302DDS-T1-GE3-SOT-23
Precio habitual $ 1.00
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SI2302DDS-T1-GE3

SI2302DDS-T1-GE3 de Vishay: canal N de 20 V 2.9A (Tj) 710mW (Ta) de montaje superficial SOT-23-3 (TO-236). Suministrado en un encapsulado SOT-23.

Stock disponible: 20091SOT-23Activo
FabricanteVishay
EncapsuladoSOT-23
Stock20091
Paquete estándar3000

Precios & Pedidos

Precio unitario$0.0493
Cantidad Precio unitario (USD)
1 $0.0493
3000 $0.0437

Información básica

Fabricante Vishay
Número de pieza del fabricante SI2302DDS-T1-GE3
Categoría MOSFET
Encapsulado SOT-23
MOQ 1
Paquete estándar 3000
Estado del ciclo de vida Active

Atributos técnicos

Tipo de FET N-Channel
Tecnología MOSFET (Metal Oxide)
Voltaje de drenaje a fuente (Vdss) 20 V
Corriente: drenaje continuo (Id) @ 25°C 2.9A (Tj)
Tensión de excitación (Rds On máx., Rds On mín.) 2.5V, 4.5V
Rds On (máx.) @ Id, Vgs 57mOhm @ 3.6A, 4.5V
Vgs(th) (máx.) @ Id 850mV @ 250µA
Carga de puerta (Qg) (máx.) @ Vgs 5.5 nC @ 4.5 V
Vgs (máx.) ±8V
Disipación de potencia (máx.) 710mW (Ta)
Temperatura de funcionamiento -55°C ~ 150°C (TJ)
Tipo de montaje Surface Mount
Encapsulado del dispositivo del proveedor SOT-23-3 (TO-236)
Encapsulado / Carcasa TO-236-3, SC-59, SOT-23-3

Documentos

El inventario y los precios se actualizan periódicamente. Los datos técnicos se proporcionan como referencia para ingeniería. La hoja de datos proviene del fabricante original.

Datasheet

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