SI2302DDS-T1-GE3 - Vishay, SOT-23

In stock - 20091 items available
SKU: SI2302DDS-T1-GE3-SOT-23
Regular price €0,95
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  • Prices include applicable taxes; import duties and customs clearance are not included.
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  • Genuine & original parts, 12-month warranty, DOA replacement.
  • Volume pricing available for 1,000+ pcs — ask us for a quote.
Quality Certifications
CMA certified CNAS accredited ERAI member ISO 9000

SI2302DDS-T1-GE3

SI2302DDS-T1-GE3 de Vishay : canal N 20 V 2,9 A (Tj) 710 mW (Ta) montage en surface SOT-23-3 (TO-236). Fourni dans un boîtier SOT-23.

Stock disponible : 20091SOT-23Actif
FabricantVishay
BoîtierSOT-23
Stock20091
Conditionnement standard3000

Tarification et commande

Prix unitaire$0.0493
Quantité Prix unitaire (USD)
1 $0.0493
3000 $0.0437

Informations de base

Fabricant Vishay
Numéro de pièce du fabricant SI2302DDS-T1-GE3
Catégorie MOSFET
Boîtier SOT-23
MOQ 1
Conditionnement standard 3000
Statut du cycle de vie Active

Attributs techniques

Type de FET N-Channel
Technologie MOSFET (Metal Oxide)
Tension drain-source (Vdss) 20 V
Courant - Drain continu (Id) @ 25°C 2.9A (Tj)
Tension de commande (Rds On max, Rds On min) 2.5V, 4.5V
Rds On (max) @ Id, Vgs 57mOhm @ 3.6A, 4.5V
Vgs(th) (max) @ Id 850mV @ 250µA
Charge de grille (Qg) (max) @ Vgs 5.5 nC @ 4.5 V
Vgs (max) ±8V
Dissipation de puissance (max) 710mW (Ta)
Température de fonctionnement -55°C ~ 150°C (TJ)
Type de montage Surface Mount
Boîtier du composant fourni SOT-23-3 (TO-236)
Boîtier / Format TO-236-3, SC-59, SOT-23-3

Documents

L'inventaire et les prix sont mis à jour régulièrement. Les données techniques sont fournies à titre de référence technique. La fiche technique provient du fabricant d'origine.

Datasheet

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