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Vishay

SI2318CDS-T1-GE3 - Vishay, SOT-23-3(TO-236)

In stock - 39742 items available
SKU: SI2318CDS-T1-GE3-SOT-23-3
(0)
€0,95
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  • Genuine & original parts, 12-month warranty, DOA replacement.
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SI2318CDS-T1-GE3

SI2318CDS-T1-GE3 von Vishay: N-Kanal 40 V 5.6A (Tc) 1.25W (Ta), 2.1W (Tc) Oberflächenmontage SOT-23-3 (TO-236). Geliefert im SOT-23-3(TO-236)-Gehäuse.

Verfügbarer Bestand: 39742SOT-23-3(TO-236)Aktiv
HerstellerVishay
GehäuseSOT-23-3(TO-236)
Lagerbestand39742
Standardverpackung3000

Preise & Bestellung

Stückpreis$0.1449
Menge Stückpreis (USD)
1 $0.1449
3000 $0.1374

Basisinformationen

Hersteller Vishay
Herstellerteilenummer SI2318CDS-T1-GE3
Kategorie MOSFET
Gehäuse SOT-23-3(TO-236)
MOQ 1
Standardverpackung 3000
Lebenszyklusstatus Active

Technische Attribute

FET-Typ N-Channel
Technologie MOSFET (Metal Oxide)
Drain-Source-Spannung (Vdss) 40 V
Strom - kontinuierlicher Drainstrom (Id) bei 25 °C 5.6A (Tc)
Ansteuerspannung (max. Rds On, min. Rds On) 4.5V, 10V
Rds On (max.) bei Id, Vgs 42mOhm @ 4.3A, 10V
Vgs(th) (max.) bei Id 2.5V @ 250µA
Gate-Ladung (Qg) (max.) bei Vgs 9 nC @ 10 V
Vgs (max.) ±20V
Eingangskapazität (Ciss) (max.) bei Vds 340 pF @ 20 V
Verlustleistung (max.) 1.25W (Ta), 2.1W (Tc)
Betriebstemperatur -55°C ~ 150°C (TJ)
Montageart Surface Mount
Gehäuse des Lieferanten SOT-23-3 (TO-236)
Gehäuse / Bauform TO-236-3, SC-59, SOT-23-3

Dokumente

SI2318CDS-T1-GE3 Datenblatt (PDF)

Lagerbestand und Preise werden regelmäßig aktualisiert. Technische Daten dienen als Referenz für die Entwicklung. Das Datenblatt stammt vom Originalhersteller.

Datasheet

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